As shown in Fig. 2, the source-drain breakdown characteristics of PMOSFETS exhibit an increase in the drain current under the same drain voltage as the gate length increases.
Source: wiktionary
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As shown in Fig. 2, the source-drain breakdown characteristics of PMOSFETS exhibit an increase in the drain current under the same drain voltage as the gate length increases.
Source: wiktionary
In this article, the performance of vertical nanowire Gate All Around (GAA) junction-less pMOSFETs on SOI having an asymmetric architecture was investigated experimentally based on an in-depth study of their electrical characteristics.
Source: wiktionary
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